60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon

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WOLFSPEED

60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier

文件：549.25 Kbytes 页数：8 Pages

Cree

科锐

60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier

The CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-o ·Features 26 dB Small Signal Gain\n·60 W Typical PSAT\n·Operation up to 40 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

TOSHIBA/东芝
M-FLAT

TOSHIBA/东芝

上传：深圳庞田科技有限公司

CMSEMICON/中微9000

CMSEMICON/中微9000

上传：深圳市恒凯威科技开发有限公司