CMPA2735015D中文资料WOLFSPEED数据手册PDF规格书

厂商型号	CMPA2735015D
功能描述	15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
文件大小	610.89 Kbytes
页面数量	9 页
生产厂商	WOLFSPEED
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-4 16:02:00
人工找货	CMPA2735015D价格和库存，欢迎联系客服免费人工找货

描述 Description

Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched amplifier

design approach enabling very wide bandwidths to be achieved.

特性 Features

• 35 dB Small Signal Gain

• 20 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.118 x 0.071 x 0.004 inches

Applications

• Civil and Military Pulsed Radar Amplifiers