15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

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15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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Cree

科锐

15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·20 W Typical PSAT\n·35 dB Small Signal Gain\n·Operation up to 50 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel

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