CMPA1D1E030D中文资料WOLFSPEED数据手册PDF规格书

厂商型号	CMPA1D1E030D
功能描述	30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier
文件大小	1.09631 Mbytes
页面数量	7 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-25 15:59:00
人工找货	CMPA1D1E030D价格和库存，欢迎联系客服免费人工找货

Description

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate

length fabrication process. GaN-on-SiC has superior properties

compared to silicon, gallium arsenide or GaN-on-Si, including higher

breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and

wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

Features

• 27 dB Small Signal Gain

• 30 W Typical PSAT

• Operation up to 40 V

• High Breakdown Voltage

• High Temperature Operation

Applications

• Satellite Communications Uplink