15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel

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15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·20 W Typical PSAT\n·35 dB Small Signal Gain\n·Operation up to 50 V\n·High Breakdown Voltage\n·High Temperature Operation;

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Package：32-VFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：25W GAN MMIC PA, 28V, 2.7-3.5GHZ

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包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：2.5-6.0GHZ, AMP W/ CMPA2560025F

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