CMPA2735030SRF/IF射频/中频RFID的射频放大器规格书PDF中文资料

CMPA2735030S属于RF/IF射频/中频RFID的射频放大器。由WOLFSPEED, INC.制造生产的CMPA2735030S射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。

Description

Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched amplifier

design approach enabling high power and power added efficiency to be

achieved in a 5mm x 5mm, surface mount (QFN package).

Features

• 32 dB Small Signal Gain

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• 5 mm x 5 mm Total Product Size

Applications

• Civil and Military Pulsed Radar Amplifiers