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CMPD2005S

SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: C

文件:109.07 Kbytes 页数:2 Pages

CENTRAL

CMPD300

FORWARD REFERENCE DIODE

DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD200 series types are multi-chip silicon diodes mounted in a JEDEC DO-35 case. These devices are designed for applications requiring controlled forward voltage characteristics such as voltage regulation, sensing, and comparing. This series is a direct repl

文件:59.6 Kbytes 页数:2 Pages

CENTRAL

CMPD3003

CURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.

文件:110.41 Kbytes 页数:2 Pages

CENTRAL

CMPD3003A

CURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.

文件:110.41 Kbytes 页数:2 Pages

CENTRAL

CMPD3003C

CURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.

文件:110.41 Kbytes 页数:2 Pages

CENTRAL

CMPD3003S

CURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.

文件:110.41 Kbytes 页数:2 Pages

CENTRAL

CMPD400

FORWARD REFERENCE DIODE

DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD200 series types are multi-chip silicon diodes mounted in a JEDEC DO-35 case. These devices are designed for applications requiring controlled forward voltage characteristics such as voltage regulation, sensing, and comparing. This series is a direct repl

文件:59.6 Kbytes 页数:2 Pages

CENTRAL

CMPD4150

high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. Marking code is ABA.

文件:77.92 Kbytes 页数:2 Pages

CENTRAL

CMPD4150_10

SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. MARKING CODE: ABA

文件:393.23 Kbytes 页数:2 Pages

CENTRAL

CMPD4448

HIGH SPEED SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. Marking code is AAD.

文件:77.82 Kbytes 页数:2 Pages

CENTRAL

晶体管资料

  • 型号:

    CMP18-12

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    36V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    512MHZ

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    67W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    36

  • htest:

    512000000

  • atest:

    5

  • wtest:

    67

技术参数

更多CMP供应商 更新时间2026-10-31 14:14:00