CMPA601J025D

6.0 - 18.0 GHz, 25 W GaN HPPA

Description Wolfspeed'sCMPA601H025Disa25W,MMICHPAutilizingWolfspeed'shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA601J025Doperatesfrom6-18GHzandsupportsa varietyofendapplicationssucgaselectronicwarfare,testinstrumentation,radarandgeneral amplif

CMPA601J025F

6 – 18 GHz, 25 W GaN HPA

Description Wolfspeed’sCMPA601J025Fisa25W,MMICHPAutilizingWolfspeed’shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA601J025Foperatesfrom6–18GHzandsupportsa varietyofendapplicationssuchaselectronicwarfare,testinstrumentation,radarandgeneral amplif

CMPA801B030D1

9 - 11 GHz, 40 W GaN HPA

Description Wolfspeed'sCMPA801B030D1isa40WMMICHPAutilizingWolfspeed'shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA801B030D1operatesfrom8-11GHzandsupportsboth defenseandcommercial-relaedradarapplications.TheCMPA801B030D1achieves40Wof saturatedoutput

CMPA801B030F1

35 W, 8.0 - 12.0 GHz, GaN MMIC, Power Amplifier

Description Cree’sCMPA801B030F1isapackaged,35WHPAutilizingCree’shigh performance,0.15umGaNonSiCproductionprocess.TheCMPA801B030F1 operatesfrom8-12GHzandtargetspulsedradarsystemssupportingboth defenseandcommercialapplications.With2stagesofgain,thishigh per

CMPA801B030S

7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA801B030Sisapackaged,40WHPAutilizingWolfspeed’shigh performance,0.15µmGaN-on-SiliconCarbideproductionprocess.TheCMPA801B030S operatesfrom7.9-11.0GHzandtargetspulsedradarsystemssupportingbothdefense andcommercialapplications.With2stage

CMPA901A020S

9.0 - 10.0 GHz, 20 W, Packaged GaN MMIC Power Amplifier

Description Cree’sCMPA901A020Sisapackaged,20WHPAutilizingCree’shighperformance, 0.15umGaNonSiCproductionprocess.TheCMPA901A020Soperatesfrom 9-10GHzandtargetspulsedradarapplicationssuchasmarineweatherradar. With3stagesofgain,thishighperformanceamplifierpro

CMPA901A035F

35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Description TheCMPA901A035Fisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit (MMIC)onasiliconcarbide(SiC)substrate.Thesemiconductoroffers 35Wattsofpowerfrom9to11GHzofinstantaneousbandwidth. TheGaNHEMTMMIC

CMPA901A035F1

35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier

Description TheCMPA901A035F1isagalliumnitride(GaN)monolithicmicrowaveintegrated circuit(MMIC)onasiliconcarbide(SiC)substrate.Thedeviceprovides35watts ofoutputpoweracrossthebandfrom9to11GHz.TheGaNHEMTMMICisfully matchedto50Ohm,ishousedinacompact,6-l

CMPA9396025S

9.3 - 9.6 GHz, 25 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA9396025SisaGaNMMICdesignedspecificallyfrom 9.3-9.6GHztobecompactandprovidehigh-efficiency,whichmakesitideal formarineradaramplifierapplications.TheMMICdelivers25Wat100μsec pulsewidthand10dutycycle.The50-ohm,3-stageMMICisavail

CMPD1001

HIGH CURRENT SWITCHING DIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPD1001seriestypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighcurrentcapability.