6.0 - 18.0 GHz, 25 W GaN HPPA

Description Wolfspeed's CMPA601H025D is a 25 W, MMIC HPA utilizing Wolfspeed's high performance, 0.15um GaN on SiC production process. The CMPA601J025D operates from 6 - 18 GHz and supports a variety of end applications sucg as electronic warfare, test instrumentation, radar and general amplif

文件：1.81546 Mbytes 页数：13 Pages

WOLFSPEED

6 – 18 GHz, 25 W GaN HPA

Description Wolfspeed’s CMPA601J025F is a 25 W, MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA601J025F operates from 6 – 18 GHz and supports a variety of end applications such as electronic warfare, test instrumentation, radar and general amplif

文件：710.8 Kbytes 页数：12 Pages

WOLFSPEED

9 - 11 GHz, 40 W GaN HPA

Description Wolfspeed's CMPA801B030D1 is a 40W MMIC HPA utilizing Wolfspeed's high performance, 0.15um GaN on SiC production process. The CMPA801B030D1 operates from 8-11 GHz and supports both defense and commercial-relaed radar applications. The CMPA801B030D1 achieves 40 W of saturated output

文件：2.45268 Mbytes 页数：20 Pages

WOLFSPEED

35 W, 8.0 - 12.0 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA801B030F1 is a packaged, 35 W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA801B030F1 operates from 8-12 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high per

文件：1.4695 Mbytes 页数：16 Pages

WOLFSPEED

7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA801B030S is a packaged, 40W HPA utilizing Wolfspeed’s high performance, 0.15µm GaN-on-Silicon Carbide production process. The CMPA801B030S operates from 7.9 - 11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stage

文件：4.98927 Mbytes 页数：17 Pages

WOLFSPEED

9.0 - 10.0 GHz, 20 W, Packaged GaN MMIC Power Amplifier

Description Cree’s CMPA901A020S is a packaged, 20W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA901A020S operates from 9-10 GHz and targets pulsed radar applications such as marine weather radar. With 3 stages of gain, this high performance amplifier pro

文件：1.39883 Mbytes 页数：15 Pages

WOLFSPEED

35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC

文件：1.91232 Mbytes 页数：22 Pages

WOLFSPEED

35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a compact, 6-l

文件：1.43558 Mbytes 页数：15 Pages

WOLFSPEED

9.3 - 9.6 GHz, 25 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA9396025S is a GaN MMIC designed specifically from 9.3 - 9.6 GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at 100μsec pulse width and 10 duty cycle. The 50-ohm, 3-stage MMIC is avail

文件：2.31686 Mbytes 页数：16 Pages

WOLFSPEED

HIGH CURRENT SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.

文件：79.39 Kbytes 页数：2 Pages

CENTRAL