35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a compact, 6-l

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35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be operated under pulse conditions.\n\nView Live Product Demonstration ·Typical Output Power 40 W\n·Typical Power Gain 23 dB\n·Typical PAE 35%\n·Operation up to 28 V;

MACOM

TOSHIBA/东芝
M-FLAT

TOSHIBA/东芝

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CMSEMICON/中微9000

CMSEMICON/中微9000

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CENTRAL
DO-214

Central

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