CMPA1842040B

1.8 – 4.2 GHz, 45 W GaN HPA

Description Wolfspeed’sCMPA1842040Disa45WMMICHPAutilizingWolfspeed’shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA1842040Doperatesfrom1.8-4.2GHzandsupports electronicwarfareapplications.TheCMPA1842040Dachieves45Wofsaturatedoutputpowerwith 25dBofl

CMPA1842040F

1.8 – 4.2 GHz, 45 W GaN HPA

Description Wolfspeed’sCMPA1842040Fisa45WMMICHPAutilizingWolfspeed’shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA1842040Foperatesfrom1.8-4.2GHzandsupports electronicwarfareapplications.TheCMPA1842040Fachieves45Wofsaturatedoutputpowerwith 24dBofl

CMPA1C1D060D

60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA1C1D060Disagalliumnitride(GaN)High ElectronMobilityTransistor(HEMT)basedmonolithicmicrowave integratedcircuit(MMIC)onaSiliconCarbidesubstrate,usinga 0.25μmgatelengthfabricationprocess.GaN-on-SiChassuperior propertiescomparedtosilicon

CMPA1C1D080F

90 W, 12.75 - 13.25 GHz, GaN MMIC, Power Amplifier

Description Cree’sCMPA1C1D080Fisapackaged,90WHPAutilizingCree’shighperformance, 0.25umGaNonSiCproductionprocess.Witha12.75-13.25GHzoperatingfrequency rangetargetingsatellitecommunications,theCMPA1C1D080Foffers3rd-order intermodulationperformanceof-30dBcat20

CMPA1D1E025F

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA1D1E025Fisagalliumnitride(GaN)HighElectronMobilityTransistor(HEMT) basedmonolithicmicrowaveintegratedcircuit(MMIC)onasiliconcarbide(SiC)substrate,using a0.25μmgatelengthfabricationprocess.TheKu-Band25WMMICistargetedforcommercial K

CMPA1D1E030D

30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA1D1E030Disagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC)onaSiliconCarbidesubstrate,usinga0.25μmgate lengthfabricationprocess.GaN-on-SiChassuperiorproperties comparedtosilicon

CMPA1D1J001S

12.7 – 18 GHz, 1 W GaN HPA

Description Wolfspeed’sCMPA1D1J001Sisa1WpackageMMICHPAutilizingWolfspeed’shighperformance, 0.15umGaNonSiCproductionprocess.TheCMPA1D1J001Soperatesfrom12.7-18GHzand supportsbothradarandcommunicationapplicationswithinbothmilitaryandcommercial markets.TheCMPA1D1

CMPA1H1J050F

17.3 – 18.4 GHz, 60 W GaN HPA

Description Wolfspeed’sCMPA1H1J050Fisa60WpackageMMICHPAutilizingWolfspeed’shigh performance,0.15umGaNonSiCproductionprocess.TheCMPA1H1J050Foperatesfrom17.3- 18.4GHzandsupportsDirectBroadcastSatellitecommunications.TheCMPA1H1J050F achieves60Wofsaturatedoutput

CMPA2060035D

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Cree’sCMP2060035Disagalliumnitride(GaN)HighElectronMobilityTransistor (HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaNhassuperior propertiescomparedtosiliconorgalliumarsenide,includinghigherbreakdown voltage,highersaturatedelectrondriftvelo

CMPA2060035F

35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA2060035Fisagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconor galliumarsenide,includinghigherbreakdownvoltage,highersaturated electrondri