1.8 – 4.2 GHz, 45 W GaN HPA

Description Wolfspeed’s CMPA1842040D is a 45W MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1842040D operates from 1.8-4.2 GHz and supports electronic warfare applications. The CMPA1842040D achieves 45 W of saturated output power with 25 dB of l

文件：829.64 Kbytes 页数：20 Pages

WOLFSPEED

1.8 – 4.2 GHz, 45 W GaN HPA

Description Wolfspeed’s CMPA1842040F is a 45W MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1842040F operates from 1.8-4.2 GHz and supports electronic warfare applications. The CMPA1842040F achieves 45 W of saturated output power with 24 dB of l

文件：808.81 Kbytes 页数：18 Pages

WOLFSPEED

60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon

文件：237.11 Kbytes 页数：8 Pages

WOLFSPEED

90 W, 12.75 - 13.25 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA1C1D080F is a packaged, 90 W HPA utilizing Cree’s high performance, 0.25um GaN on SiC production process. With a 12.75 - 13.25 GHz operating frequency range targeting satellite communications, the CMPA1C1D080F offers 3rd-order intermodulation performance of -30 dBc at 20

文件：1.8275 Mbytes 页数：18 Pages

WOLFSPEED

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku-Band 25W MMIC is targeted for commercial K

文件：2.83204 Mbytes 页数：19 Pages

WOLFSPEED

30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon

文件：1.09631 Mbytes 页数：7 Pages

WOLFSPEED

12.7 – 18 GHz, 1 W GaN HPA

Description Wolfspeed’s CMPA1D1J001S is a 1W package MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within both military and commercial markets. The CMPA1D1

文件：912.94 Kbytes 页数：18 Pages

WOLFSPEED

17.3 – 18.4 GHz, 60 W GaN HPA

Description Wolfspeed’s CMPA1H1J050F is a 60W package MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1H1J050F operates from 17.3- 18.4 GHz and supports Direct Broadcast Satellite communications. The CMPA1H1J050F achieves 60 W of saturated output

文件：1.033079 Mbytes 页数：18 Pages

WOLFSPEED

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMP2060035D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo

文件：400.4 Kbytes 页数：8 Pages

WOLFSPEED

35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.02124 Mbytes 页数：10 Pages

WOLFSPEED