35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMP2060035D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo

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WOLFSPEED

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.02124 Mbytes 页数：10 Pages

WOLFSPEED

TOSHIBA/东芝
M-FLAT

TOSHIBA/东芝

上传：深圳庞田科技有限公司

CMSEMICON/中微9000

CMSEMICON/中微9000

上传：深圳市恒凯威科技开发有限公司