CMPA0060002F

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA0060002Fisagalliumnitride(GaN)HighElectronMobilityTransistor(HEMT) basedmonolithicmicrowaveintegratedcircuit(MMIC).GaNhassuperiorpropertiescompared tosiliconorgalliumarsenide,includinghigherbreakdownvoltage,highersaturatedelectron drif

CMPA0060002F1

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA0060002F1isagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaN hassuperiorpropertiescomparedtosiliconorgalliumarsenide,including higherbreakdownvoltage,highersaturatedelectrondri

CMPA0060025D

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA0060025Disagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconor galliumarsenide,includinghigherbreakdownvoltage,highersaturated electrondri

CMPA0060025F

25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA0060025Fisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaN hassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigher breakdownvoltage,highersaturatedelectrondrif

CMPA0060025F1

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA0060025F1isagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaN hassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigher breakdownvoltage,highersaturatedelectrondri

CMPA0527005F

5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

Description CMPA0527005Fisapackagedgalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).Thisdeviceismatchedto50ohmsattheinputand unmatchedattheoutput.Thisdeviceoperatesfroma50Vrail andisintendedtobeu

CMPA0530002S

2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC

Description Wolfspeed’sCMPA0530002Sisapackagedgalliumnitride(GaN)High ElectronMobilityTransistor(HEMT)basedmonolithicmicrowave integratedcircuit(MMIC).TheMMICpoweramplifierismatchedto 50-ohmsontheinput.TheCMPA0530002Soperatesona28voltrail whilehousedina3m

CMPA0530002S-AMP1

2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC

Description Wolfspeed’sCMPA0530002Sisapackagedgalliumnitride(GaN)High ElectronMobilityTransistor(HEMT)basedmonolithicmicrowave integratedcircuit(MMIC).TheMMICpoweramplifierismatchedto 50-ohmsontheinput.TheCMPA0530002Soperatesona28voltrail whilehousedina3m

CMPA0560008S

0.5 – 6 GHz, 10 W GaN HPA

Description Wolfspeed’sCMPA0560008Sisa10WpackagedMMICHPAutilizingWolfspeed’shighperformance, 0.15umGaNonSiCproductionprocess.TheCMPA0560008Soperatesfrom0.5-6GHzandsupportsa varietyofRFapplicationssuchaselectronicwarfare,testandmeasurement,radaramongothers.

CMPA0760020F

0.7 – 6.0 GHz, 25 W GaN MMIC HPA

Description Wolfspeed’sCMPA0760020Fisa25WpackageMMICHPAutilizingWolfspeed’shighperformance, 0.15umGaNonSiCproductionprocess.TheCMPA0760020Foperatesfrom0.7-6GHzandsupports militarycommunicationsandelectronicwarfarealongwithISMandEMCamplification.The CMPA076002