2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：1.01219 Mbytes 页数：8 Pages

WOLFSPEED

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：2.26577 Mbytes 页数：10 Pages

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2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.12525 Mbytes 页数：10 Pages

WOLFSPEED

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.49084 Mbytes 页数：8 Pages

WOLFSPEED

25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：4.16814 Mbytes 页数：12 Pages

WOLFSPEED

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA0060025F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：2.98428 Mbytes 页数：11 Pages

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5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

Description CMPA0527005F is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be u

文件：1.37208 Mbytes 页数：12 Pages

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2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC

Description Wolfspeed’s CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002S operates on a 28 volt rail while housed in a 3m

文件：2.14383 Mbytes 页数：20 Pages

WOLFSPEED

2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC

Description Wolfspeed’s CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002S operates on a 28 volt rail while housed in a 3m

文件：2.14383 Mbytes 页数：20 Pages

WOLFSPEED

0.5 – 6 GHz, 10 W GaN HPA

Description Wolfspeed’s CMPA0560008S is a 10W packaged MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA0560008S operates from 0.5-6 GHz and supports a variety of RF applications such as electronic warfare, test and measurement, radar among others.

文件：859.32 Kbytes 页数：17 Pages

WOLFSPEED