2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

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WOLFSPEED

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

Package：440219；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：2W GAN MMIC PA 28V 0.02-6.0GHZ

WOLFSPEED

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：0.02-6.0GHZ, AMP W/ CMPA0060002F

WOLFSPEED