CMPA0060002F1数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach; enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

特性 Features

·17 dB Small Signal Gain
·3 W Typical PSAT
·Operation up to 28 V
·High Breakdown Voltage
·High Temperature Operation

应用 Application

·Test Instrumentation
·Fiber Drivers
·EMC Amplifier Drivers
·Ultra Broadband Amplifiers