CMPA3135060S

3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA3135060Sisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaN hassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigher breakdownvoltage,highersaturatedelectrondrif

CMPA5259025S

40 W, 5.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA5259025Sisagallium-nitride(GaN)HEMT-basedmonolithicmicrowave integratedcircuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconorgallium arsenideallowingthetechnologytooffergreaterpowerdensityandwiderbandwidths comparedtoSiandGaAsdev

CMPA5259050D1

5.0 – 5.9 GHz* , 60 W GaN HPA

Description Wolfspeed’sCMPA5259050D1isa60WMMICHPAutilizingWolfspeed’shighperformance,0.15um GaNonSiCproductionprocess.TheCMPA5259050D1operatesfrom5.0-5.9GHzandsupportsboth defenseandcommercial-relatedradarapplications.TheCMPA5259050D1achieves60Wof saturatedou

CMPA5259050F

50 W, 4.9 – 5.9 GHz, 28 V, GaN MMIC for Radar Power Amplifiers

Description Wolfspeed’sCMPA5259050Fisagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)designedspecificallyforhighefficiency,high gain,andwidebandwidthcapabilities,whichmakesCMPA5259050F idealfor4.9-5.9GHzRadaramplifierapplications.Thetransistoris supp

CMPA5259050S

50 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA5259050Sisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC). ThisMMICcontainsatwo-stagereactivelymatchedamplifierdesign approachenablinghighpowerandpoweraddedefficiencytobeachiev

CMPA5259080S

80 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier

Description Cree’sCMPA5259080Sisagalliumnitride(GaN)HighElectronMobilityTransistor (HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaNhassuperior propertiescomparedtosiliconorgalliumarsenide,includinghigherbreakdown voltage,highersaturatedelectrondriftvel

CMPA5585030D

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA5585030Disagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegratedcircuit (MMIC).GaNhassuperiorpropertiescomparedtosiliconorgallium arsenide,includinghigherbreakdownvoltage,highersaturatedelectron dri

CMPA5585030F

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA5585030Fisagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconor galliumarsenide,includinghigherbreakdownvoltage,highersaturated electrondri

CMPA601C025D

6 - 12 GHz, 40 W GaN HPA

Description Wolfspeed'sCMPA601C025Disa40WMMICHPAutilizingWolfspeed'shighperformance,0.25um GaNonSiCproductionprocess.TheCMPA601C025Doperatesfrom6-12GHzandsupportsboth defenseandcommercial-relatedradarandelectronicwarfareapplications.TheCMPA601C025D achieves40

CMPA601C025F

25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

Description TheCMPA601C025Fisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit (MMIC)onaSiliconCarbide(SiC)substrate,usinga0.25μmgate lengthfabricationprocess.Thesemiconductoroffers25Wattsof powerfrom6to12G