CMPA3135060S

3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’sCMPA3135060Sisagalliumnitride(GaN)HighElectronMobility Transistor(HEMT)basedmonolithicmicrowaveintegratedcircuit(MMIC).GaN hassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigher breakdownvoltage,highersaturatedelectrondrif

CMPA3135060S

3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier; ·3.1 – 3.5 GHz Operation\n·75 W Typical Output Power\n·29 dB Power Gain\n·50-ohm Matched for Ease of Use\n·Plastic Surface-Mount Package; 7×7 mm QFN\n;

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.\n

CMPA3135060S

3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier

CMPA3135060S-AMP1

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：3.1-3.5GHZ, AMP W/ CMPA3135060S