30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

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WOLFSPEED

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

文件：1.06639 Mbytes 页数：17 Pages

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科锐

30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier

The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer ·Up to 50 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier

The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer ·Up to 50 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST BOARD

WOLFSPEED