CMPA5585030F-TB技术资料参数市场行情科锐-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CMPA5585030F-TB	文件：100 bytes Page：1 Pages	包装：盒类别：开发板，套件，编程器射频评估和开发套件，开发板描述：TEST BOARD	WOLFSPEED	WOLFSPEED
CMPA5585030D	文件：297.2 Kbytes Page：9 Pages	30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri 文件：297.2 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA5585030D	文件：453.35 Kbytes Page：9 Pages	30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier 文件：453.35 Kbytes 页数：9 Pages	Cree 科锐	Cree
CMPA5585030F	文件：2.25385 Mbytes Page：17 Pages	30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri 文件：2.25385 Mbytes 页数：17 Pages	WOLFSPEED	WOLFSPEED

更多CMPA5585030F-TB供应商更新时间2021-9-14 10:50:00