CMPA5585030D

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’sCMPA5585030Disagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegratedcircuit (MMIC).GaNhassuperiorpropertiescomparedtosiliconorgallium arsenide,includinghigherbreakdownvoltage,highersaturatedelectron dri

CMPA5585030D

30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier; ·Up to 50 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation\n;

The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage; reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC is available as a die and in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.\n

CMPA5585030D

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

CMPA5585030D

Package：模具；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP 5.5GHZ-8.5GHZ 30W

CMPA5585030F

30W,5.5-8.5GHz,GaNMMIC,PowerAmplifier

Description Wolfspeed’sCMPA5585030Fisagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconor galliumarsenide,includinghigherbreakdownvoltage,highersaturated electrondri

CMPA5585030F

30W,5.5-8.5GHz,GaNMMIC,PowerAmplifier