25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：4.16814 Mbytes 页数：12 Pages

WOLFSPEED

25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

文件：2.00392 Mbytes 页数：11 Pages

CREE

科锐

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA0060025F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：2.98428 Mbytes 页数：11 Pages

WOLFSPEED

25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

文件：2.00392 Mbytes 页数：11 Pages

CREE

科锐

25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

文件：2.00392 Mbytes 页数：11 Pages

CREE

科锐

25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·18 dB Small Signal Gain\n·30 W Typical PSAT\n·Operation up to 50 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·18 dB Small Signal Gain\n·30 W Typical PSAT\n·Operation up to 50 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·18 dB Small Signal Gain\n·30 W Typical PSAT\n·Operation up to 50 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO AMP CKT CMPA0060025F

WOLFSPEED