75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo

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WOLFSPEED

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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Cree

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75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·80 W Typical PSAT\n·28 V Operation\n·27 dB Small Signal Gain\n·High Breakdown Voltage\n·High Temperature Operation;

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75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

Cree

科锐

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

Cree

科锐

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

Cree

科锐