75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

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75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dr

文件：1.90341 Mbytes 页数：10 Pages

WOLFSPEED

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

Cree

科锐

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

文件：2.13087 Mbytes 页数：10 Pages

Cree

科锐

75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs

MACOM

75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·80 W Typical PSAT\n·28 V Operation\n·27 dB Small Signal Gain\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：AMPLIFIER, 2.7-3.5GHZ, GAN MMIC

WOLFSPEED