CMPA2735075F1开发板套件编程器的射频评估开发套件开发板规格书PDF中文资料

CMPA2735075F1属于开发板套件编程器的射频评估开发套件开发板。由WOLFSPEED, INC.制造生产的CMPA2735075F1射频评估和开发套件，开发板本系列中的产品适用于在已知实施环境中，提供能访问射频相关器件的功能或者有助于访问该功能。所含的焦点产品范围从射频信号链元器件（如放大器和检测器）到模块化收发器，以及不直接包含焦点产品的适配器硬件，但此类硬件可供方便地访问用户单独提供的特定射频产品或系列。

Description

Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC). GaN has superior properties compared

to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density

and wider bandwidths compared to Si and GaAs transistors. This

MMIC contains a two-stage reactively matched amplifier design

approach enabling very wide bandwidths to be achieved.

Features

• 29 dB Small Signal Gain

• 76 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• 0.5” x 0.5” Total Product Size

Applications

• Civil and Military Pulsed

Radar Amplifiers