CMPA2735075D中文资料WOLFSPEED数据手册PDF规格书

Description

Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide

bandwidths to be achieved.

Features

• 30 dB Small Signal Gain

• 80 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.197 x 0.174 x 0.004 inches

Applications

• Civil and Military Pulsed Radar Amplifiers