CMPA2735075F1数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a flange, screw-down package.

特性 Features

·80 W Typical PSAT
·28 V Operation
·27 dB Small Signal Gain
·High Breakdown Voltage
·High Temperature Operation

应用 Application

·Civil and Military Pulsed Radar Amplifiers