CMPA1C1D060D中文资料60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier数据手册MACOM规格书

描述 Description

The CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

特性 Features

·Features 26 dB Small Signal Gain
·60 W Typical PSAT
·Operation up to 40 V
·High Breakdown Voltage
·High Temperature Operation

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms