CMPA0527005中文资料5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers数据手册MACOM规格书

描述 Description

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 - 2.7 GHz. The transistor is available in a 6 leaded flange package.

特性 Features

·Up to 2.7 GHz Operation
·8 W Typical Output Power
·20 dB Small Signal Gain
·Application Circuit for 0.5 – 2.7 GHz
·50% Efficiency
·50 V Operation

应用 Application

·Amplifier Predriver from 0.5 – 2.7 GHz