5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver fr ·Up to 2.7 GHz Operation\n·8 W Typical Output Power\n·20 dB Small Signal Gain\n·Application Circuit for 0.5 – 2.7 GHz\n·50% Efficiency\n·50 V Operation;

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5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

Description CMPA0527005F is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be u

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5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

文件：1.01122 Mbytes 页数：12 Pages

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Package：440221；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：5W GAN MMIC PA 50 0.5-2.7GHZ

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：AMPLIFIER, 0.5-2.7GHZ, GAN MMIC

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