CMPA1D1E030中文资料30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier数据手册MACOM规格书

描述 Description

The CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a  0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

特性 Features

·27 dB Small Signal Gain
·30 W Typical PSAT
·Operation up to 40 V
·High Breakdown Voltage
·High Temperature Operation

应用 Application

·Satellite Communications Uplink