30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier

The CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a  0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN- ·27 dB Small Signal Gain\n·30 W Typical PSAT\n·Operation up to 40 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon

文件：1.09631 Mbytes 页数：7 Pages

WOLFSPEED

30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier

文件：595.44 Kbytes 页数：6 Pages

Cree

科锐

M-FLAT

TOSHIBA/东芝

上传：深圳庞田科技有限公司

CMSEMICON/中微9000

上传：深圳市恒凯威科技开发有限公司