CMPA1D1E025数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

The CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25 -μm  gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.

特性 Features

·24 dB Small Signal Gain
·40 W Typical Pulsed PSAT
·Operation up to 40 V
·20 W linear power under OQPSK
·Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms