25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier

The CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25 -μm  gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN ·24 dB Small Signal Gain\n·40 W Typical Pulsed PSAT\n·Operation up to 40 V\n·20 W linear power under OQPSK\n·Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier;

MACOM

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku-Band 25W MMIC is targeted for commercial K

文件：2.83204 Mbytes 页数：19 Pages

WOLFSPEED

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

文件：4.06768 Mbytes 页数：17 Pages

Cree

科锐

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

文件：4.06768 Mbytes 页数：17 Pages

Cree

科锐

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

文件：4.06768 Mbytes 页数：17 Pages

Cree

科锐

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST FIXTURE FOR CMPA1D1E025F

WOLFSPEED