25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：1.35046 Mbytes 页数：11 Pages

WOLFSPEED

25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

文件：550.26 Kbytes 页数：9 Pages

CREE

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25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·24 dB Small Signal Gain\n·25 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

Description Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

文件：999.29 Kbytes 页数：12 Pages

WOLFSPEED

CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：630.22 Kbytes 页数：10 Pages

CREE

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25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 页数：11 Pages

CREE

科锐