25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·24 dB Small Signal Gain\n·25 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 页数：11 Pages

Cree

科锐

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CMPA2560025F DEV BOARD WITH HEMT

WOLFSPEED

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 页数：11 Pages

Cree

科锐