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CMPA2060035F

35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件:1.02124 Mbytes 页数:10 Pages

WOLFSPEED

CMPA2060035F1

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA2060035F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件:1.61667 Mbytes 页数:17 Pages

WOLFSPEED

CMPA2060035F

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

CMPA2060035F-AMP

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation\n;

MACOM

CMPA2060035F-AMP1

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

技术参数

  • Min Frequency(MHz):

    2000

  • Max Frequency(MHz):

    6000

  • Peak Output Power(W):

    35

  • Gain(dB):

    30.0

  • Efficiency(%):

    35

  • Operating Voltage(V):

    28

  • Form:

    Packaged MMIC

  • Package Category:

    Flange

  • Technology:

    GaN-on-SiC

供应商型号品牌批号封装库存备注价格
MACOM
24+
5000
原装优势现货
询价
CREE/科锐
25+
射频
50000
原装品质,专业护航,省心采购,就选橙椒科技!
询价
MACOM Technology Solutions
26+
440219
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
MACOM
最新
原装
15860
全新原装新到现货假一罚十特价
询价
M/A-COM
24+
SMD
1000
M/A-COM专营品牌绝对进口原装假一赔十
询价
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CREE
26+
N/A
90000
进口原装现货假一罚十价格合理
询价
CREE/科锐
专业军工
NA
1000
只做原装正品军工级部分订货
询价
CREE/科锐
2018+
TO-59
1980
原装正品,诚信经营
询价
WOLFSPEED
25+
780019
55
就找我吧!--邀您体验愉快问购元件!
询价
更多CMPA2060035F供应商 更新时间2026-10-8 12:34:00