30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and hi

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30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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Cree

科锐

30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·Operation up to 50 V\n·High Breakdown Voltage\n·Offered in a 5mm x 5mm; QFN package\n·High Temperature Operation;

MACOM

30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

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