N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

文件：41.67 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

文件：41.67 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 500 Volts CURRENT 6.6 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：220.56 Kbytes 页数：2 Pages

CHENMKO

力勤

6 Amp bi-directional solid state switch series is designed for AC switching

Description 6 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Features & Benefits • RoHS compliant • Glass – passivated junction

文件：1.12049 Mbytes 页数：14 Pages

LITTELFUSE

力特