| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CEB1195 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：437.74 Kbytes 页数：4 Pages | CET 华瑞 | CET | |
CEB1195 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. 文件：583.01 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | |
N Channel Product | CET 华瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：437.74 Kbytes 页数：4 Pages | CET 华瑞 | CET | ||
N-Channel MOSFET uses advanced trench technology 文件：1.24964 Mbytes 页数：4 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. 文件：583.01 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS |
技术参数
- BVDSS(V)：
900
- Rds(on)mΩ@10V：
3000
- ID(A)：
5
- Qg(nC)@10V(typ)：
29
- RθJC(℃/W)：
0.76
- Pd(W)：
164
- Configuration：
Single
- Polarity：
N
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
CET/華瑞 |
23+ |
TO-263 |
79999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
CET |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
询价 | ||
CET |
24+ |
TO-263 |
5000 |
只做原装公司现货 |
询价 | ||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CET |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
CET/華瑞 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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