N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 55A, RDS(ON) = 10mΩ @VGS = 4.5V. RDS(ON) = 14mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.94 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：113.01 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 55A, RDS(ON) = 10mΩ @VGS = 4.5V. RDS(ON) = 14mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.94 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：113.01 Kbytes 页数：4 Pages

CET

华瑞