P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：434.89 Kbytes 页数：4 Pages

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华瑞

丝印：D2PAK；Package：TO-263；P-Channel 60 V (D-S) MOSFET

文件：1.59421 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

P Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -16A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：358.8 Kbytes 页数：4 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -16A, RDS(ON) = 86mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 125mW @VGS = -4.5V. RoHS compliant.

文件：428.04 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：345.33 Kbytes 页数：4 Pages

CET

华瑞