N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：86.39 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：398.48 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.73292 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 7.5A, RDS(ON) = 0.36W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：611.08 Kbytes 页数：4 Pages

CET-MOS

华瑞