Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：438.84 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. RDS(ON) = 48mW @VGS = 1.8V.

文件：758.46 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：365.32 Kbytes 页数：4 Pages

CET

华瑞

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. • Universal plastic enclosure with screw fastening • Available in 26 sizes in two colours; white and black • Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 页数：2 Pages

CAMDENBOSS

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. • Universal plastic enclosure with screw fastening • Available in 26 sizes in two colours; white and black • Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 页数：2 Pages

CAMDENBOSS