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CED01N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED01N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.35A,RDS(ON)=10.5Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.3A,RDS(ON)=15W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.3A,RDS(ON)=15Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

详细参数

  • 型号:

    CED01N65A

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET
2020+
TO-251
100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CET
23+
TO-251
8560
受权代理!全新原装现货特价热卖!
询价
CET
24+
TO-251
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
CET/華瑞
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
C
23+
IPAK
6000
原装正品,支持实单
询价
CET/華瑞
2022+
TO-251
30000
进口原装现货供应,原装 假一罚十
询价
CET
25+
TO-251
20
原装正品,假一罚十!
询价
恩XP
24+
TSOP14
10966
公司现货库存,支持实单
询价
SR
23+
IPAK
5000
原装正品,假一罚十
询价
CET/華瑞
22+
TO-251
20000
深圳原装现货正品有单价格可谈
询价
更多CED01N65A供应商 更新时间2025-7-20 8:22:00