N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

文件：1.2255 Mbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.35A, RDS(ON) = 10.5 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.

文件：679.14 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.3A, RDS(ON) = 15 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.

文件：583.86 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

文件：375.48 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞