N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：113.01 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 48 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Small package. (TO-252A) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CONSTRUCTION * N-Ch

文件：199.83 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 55A, RDS(ON) = 10mΩ @VGS = 4.5V. RDS(ON) = 14mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.94 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：113.01 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 55A, RDS(ON) = 10mΩ @VGS = 4.5V. RDS(ON) = 14mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.94 Kbytes 页数：4 Pages

CET

华瑞