N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 75A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：520.559 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 75A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：520.559 Kbytes 页数：5 Pages

CET

华瑞

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

文件：274.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉