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CEB9N25

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP9N25

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

FQB9N25

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N25C

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD9N25

250VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD9N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD9N25

N-ChannelQFET짰MOSFET250V,7.4A,420廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD9N25TM

250VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI9N25

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI9N25C

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    CEB9N25

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET
24+
TO-263
27500
原装正品,价格最低!
询价
SPCOMT
2022+
69
全新原装 货期两周
询价
原厂
23+
5550
正品原装货价格低
询价
CET
24+
5000
询价
CET
24+
TO-263
5000
只做原装公司现货
询价
CET
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
询价
CET
18+
TO-263
41200
原装正品,现货特价
询价
INFINOEN
23+
DPAK(TO-
69820
终端可以免费供样,支持BOM配单!
询价
更多CEB9N25供应商 更新时间2025-7-22 15:01:00