CEB93A3规格书供应价格华瑞CET-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB93A3	文件：400.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 150A, RDS(ON) = 3.0 mW @VGS = 10V. RDS(ON) = 6.0 mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：400.41 Kbytes 页数：4 Pages	CET 华瑞	CET
CEB93A3	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CED93A3	文件：416.45 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：416.45 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP93A3	文件：1.68067 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.68067 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
CEP93A3	文件：400.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 150A, RDS(ON) = 3.0 mW @VGS = 10V. RDS(ON) = 6.0 mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：400.41 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CEB93A3供应商更新时间2025-11-18 14:01:00