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CEB85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

详细参数

  • 型号:

    CEB85A3

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
SR
23+
T0-263
5000
原装正品,假一罚十
询价
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
询价
SAMSUNG/三星
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
CET/華瑞
2022+
TO-263
1239
原厂代理 终端免费提供样品
询价
CET/華瑞
23+
TO-263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CET
23+
TO-263
6000
原装正品,支持实单
询价
CET
23+
TO-263
7300
专注配单,只做原装进口现货
询价
CET
23+
TO-263
7300
专注配单,只做原装进口现货
询价
CET
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
CET/華瑞
23+
TO-263
360000
交期准时服务周到
询价
更多CEB85A3供应商 更新时间2025-5-19 15:36:00