N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：99.24 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nTO-220 & TO-263 package & TO-220F full-pak for through hole.\nLead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

Features Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：402.39 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：652.77 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：99.24 Kbytes 页数：4 Pages

CET

华瑞